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2SK2795
Silicon N Channel MOS FET UHF Power Amplifier
ADE-208-466 A (Z) 2nd. Edition November. 1996 Features
* * High power output, High gain, High effeciency PG = 11dB, Pout = 24dBm, D = 40 %min. (f = 836.5MHz) Compact package capable of surface mounting
Outline
UPAK
3
2
1
4 1. Gate 2. Source 3. Drain 4. Source
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
2SK2795
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID ID(pulse)*1 Pch*2 Tch Tstg Ratings 10 6 0.17 0.3 1 150 -45 to +150 Unit V V A A W C C
1. PW 10ms, duty cycle 50 % 2. Value at Tc = 25C
Electrical Characteristics (Ta = 25C)
Item Zero gate voltege drain current Gate to source leak current Symbol IDSS IGSS Min -- -- 0.3 -- Typ -- -- -- 9.5 Max 10 5.0 1.0 -- Unit A A V pF Test Conditions VDS = 10 V, VGS = 0 VGS = 6V, VDS = 0 ID = 1mA, VDS = 5V VGS = 2V, VDS = 0 f = 1MHz Output capacitance Coss -- 4.5 -- pF VDS = 5, VGS = o f = 1MHz Output Power Pout 24 -- -- dBm VDS = 4.7V f =836.5MHz Pin = 13dBm Drain Rational D 40 -- -- % VDS = 4.7V f =836.5MHz Pin = 13dBm Note: 3. Marking is " DX ".
Gate to source cutoff voltage VGS(off) Input capacitance Ciss
2SK2795
Main Characteristics
Maximum Channel Power Dissipation Curve
Pch (W)
Typical Output Characteristics 1.0 6V 5V 0.8 4.5 V 4V 0.6
3.5 V
2.0
3V
2.5 V
Channel Power Dissipation
Drain Current
1.0
I D (A)
1.5
0.4
2V
0.5
0.2 Pulse Test
1.5 V V GS = 1 V
0
50
100
150 Tc (C)
200
0
Case Temperature
2 3 4 5 6 1 Drain to Source Voltage V DS (V)
Typical Transfer Characteristics V DS = 5 V Pulse Test
(A) Forward Transfer Admittance |y fs | (S)
0.20
1 0.5 0.2 0.1
Forward Transfer Admittance vs. Drain Current
0.16
25C Tc = -25C
ID Drain Current
0.12 Tc = -25C 75C 25C
0.08
0.05
75C
0.04
0.02 0.01
0.001 0.003 0.01 0.3
V DS = 5 V Pulse Test
0.1 0.3 1
0
0.4
0.8
1.2
1.6 V GS (V)
2.0
Gate to Source Voltage
Drain Current I D (A)
2SK2795
Drain to Source Saturation Voltage vs. Drain Current 1.0
Gate to Source Cutoff Voltage VGS(off) (V)
Drain to Source Saturation Voltage VDS(sat) (V)
10 3 1
Gate to Source Cutoff Voltage vs. Ambient Temperature
0.8
10 mA
1 mA 0.1 m A
25C 75C
0.6
ID=
0.3 0.1 Tc = -25C V DS = 6 V Pulse Test 1 3 10 30 100 300 1000
0.4
0.03 0.01
0.2 0 -25 V DS = 5 V 0 25 50 75 100 125
Drain Current I D (mA)
Ambient Temperature Ta (C)
Input Capacitance vs. Gate to Source Voltage 10
Output Capacitance Coss (pF) Input Capacitance Ciss (pF)
Output Capacitance vs. Drain to Source Voltage 100 50 V GS = 0 f = 1 MHz
9
20 10 5
8
7 V DS = 0 f = 1 MHz 6 -6 -2 0 2 4 6 -4 Gate to Source Voltage VGS (V)
2 1 0.1
0.2
0.5
1
2
5
10
Drain to Source V DS (V)
2SK2795
Reverse Transfer Capacitance vs. Gate to Source Votage 100 500 V GS = 0 f = 1 MHz Output Power, Drain Rational vs. Input Power 100 Po D
Reverse Transfer Capacitance Crss (pF)
Output Power Po (mW)
50
20 10 5
300
60
200 V DS = 4.7 V I DO = 50 mA f = 836.5MHz 10 20 30 40
40
2 1 0.1
100
20 0 50
0.2
0.5
1
2
5 (V)
10
0
Gate to Source Voltege V GS
Input power Pin (mW)
Drain Rational D (%)
400
80
2SK2795
Package Dimensions
Unit: mm
4.5 0.1
1.0
1.5 1.5 3.0
0.8 min
0.53 max 0.48 max
1
2
3
2.5 0.1 4.25 max
4
0.4
1.8 max
1.5 0.1 0.44 max
0.44 max
Hitachi Code EIAJ JEDEC
UPAK SC-62 --

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